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| | University of Illinois at Urbana-Champaign | James T Allison | |
Academic
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Power Generation: Renewable
| The Engineering System Design Laboratory (ESDL) at UIUC is a leading research group in the creation, analysis, and application of advanced engineering system design methods. We have created breakthrough system design optimization methods at the interface of physical and control system design, a field known as control co-design CCD, and for Spatial Packaging of Interconnected Systems with Physics Interactions (SPI2). ESDL has extensive experience with system optimization of energy producing and consuming systems, including floating offshore wind (two ARPA-E ATLANTIS projects), hydrokinetic turbines (three ARPA-E SHARKS projects), and vehicle electrification and mobile power electronics (NSF POETS ERC founding faculty member: Power Optimization of Electrothermal Systems).
Several ARPA-E programs (ATLANTIS, FLECCS, SHARKS, others) are centered on using advanced CCD methods to achieve ambitious objectives, and current CCD methods are largely linked to ESDL research. CCD may prove to be a critical enabler of a range of ULTRAFAST projects by making possible the discovery of non-obvious design solutions. The role of the ESDL could range from supporting modest system design optimization studies to a central role in core research. We also have significant experience in training industry, government, and other partners in advanced system design methods, enabling ARPA-E teams to amplify their impact through their new design optimization capabilities.
Of particular interest to ULTRAFAST is the advent of design automation methods for SPI2 systems. SPI2 design decisions exist across most physical engineering systems, from 'chips to ships'. SPI2 involves more than geometric layout; it accounts for the impact of physics interactions (e.g., thermal, EMI, structural, etc.). Current design practice involves at least some manual design tasks, which is a costly bottleneck in systems engineering. SPI2 design automation has been made possible for the first time by breakthroughs in mathematical design representation involving spatial graph theory, allowing SPI2 decisions to be driven by algorithms instead of intuition alone. This both removes the bottleneck of manual design in SPI2 systems, and expands the complexity of systems that can be designed. For example, SPI2 design automation is central to realizing truly freeform chips. More details about SPI2 design research can be found at: https://spi2.illinois.edu/. |
| IL |
| | Sandia National Laboratatories | Laura Biedermann | |
Federally Funded Research and Development Center (FFRDC)
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Grid
| Sandia National Laboratories is developing a novel nanosecond-responsive arrester technology to protect critical grid components from rapid insults. These arresters would protect grid components from the early-time (E1) components of high-altitude electromagnetic pulse (HEMP) events that result from high-altitude nuclear detonations. We are developing passive E1-arrestors with high-voltage strength, high-current density granular metals as the active material. These proposed E1-arresters will shunt E1 overvoltages to ground until existing lighting surge arresters clamp slower EMP transients. Such E1-arresters address "Category 1: Fast triggering for improved protection."
This research is conducted in collaboration with Sandia's Microsystems Engineering Sciences and Applications (MESA) complex and characterized in our various labs for microstructural determinations and high-frequency, high-voltage testing capabilities.
Interests: We seek partners with expertise in packaging technologies and module design. We are open to collaboration in related fields. Please feel free to contact us for potential partnerships. |
| NM |
| | NREL | Barry Mather | |
Federally Funded Research and Development Center (FFRDC)
|
Grid
| NREL's Power System Engineering Center (PSEC) contains experts related to the grid integration of renewables and grid modernization in general across the broad research space of power systems. Specific to ARPA-E ULTRAFAST, NREL is interested in connecting the developed ultra-fast devices to grid applications, particularly in the renewable or grid modernization space. Via the Energy System Integration Facility (ESIF) and NREL's Flatirons Campus, NREL has high power (up to 20 MVA) medium voltage evaluation capability of prototype converters/inverters. We are also interested in research that connects grid application requirements to power electronic device specifications to increase efficiency, lower overall cost, and provide greater lifetime and reliability. |
| CO |
| | University of Illinois at Urbana-Champaign | Shaloo Rakheja | |
Academic
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Other Energy Technologies
| Computational electronics, Non-equilibrium transport, Monte Carlo, Boltzmann transport, Energy transport, Device simulation, Modeling, Optical-electrical-thermal design |
| IL |
| | Eureka Aerospace Inc. | Fred Zutavern | |
Small Business
|
Other Energy Technologies
| Experience in theory, experimental studies, and applications of GaAs Photoconductive Semiconductor Switches (PCSS). Experience in designing and manufacturing of GaAs PCSSs, developing a micro-optical transport system for optimal light-induced triggering, and packaging all the elements together with the laser emitting arrays into a compact switch unit. Our optical/electric lab is fully equipped to conduct the experimental characterization of PCSSs with high voltage pulses, evaluate transient properties, voltages, currents, and longevity of the switches. Optical engineering software and optical lab facilities allow us to design and test compact optical systems for the photoconductive switches’ triggering. Our team has a broad interdisciplinary expertise in the fields of semiconductors, electromagnetics, electrical engineering, and optics. |
| CA |
| | Texas Tech University | Hongxing Jiang and Jingyu Lin | |
Academic
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Grid
| Jiang-Lin group at Texas Tech University has the capability to produce large wafers (up to 6-inches in diameter) semi-bulk AlN and h-BN ultrawide bandgap semiconductor crystals. Track records: (1) Thermal neutron detectors fabricated from our h-BN semiconductor wafers hold the highest detection efficiency in the world; (2) Invented microLED in 2000 (MicroLED display market to hit USD 24 billion in 2027); (3) Invented single-chip GaN high voltage AC/DC LED in 2002 (adopted for general lighting and automobile head lights): (3) Developed in 1998 the 1st deep UV (195 nm) ps time-resolved PL spectroscopy for ultrawide wide bandgap semiconductor optical characterization; (4) Fabricated in 2004 the 1st AlGaN photonic crystal LED; (5) One of the first to experimentally determine the Mg acceptor energy level in AlN and to demonstrate the conductivity control in Al-rich AlGaN. |
| TX |
| | The Boeing Company | ShengyiLiu | |
Large Business
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Transportation
| Interest: Altitude-capable power generation, conversion, distribution, and protection devices and systems with higher specific power, efficiency, and reliability for aircraft applications |
| WA |
| | PG&E | Damian Inglin | |
Large Business
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Grid
| PG&E (Engineering, Planning, and Strategy organization, aka EP&S) is scouting for technologies in this area to collaborate on, foster development of, demonstrate in network, and eventually deploy for all applicable grid, microgrid, remote grid applications. |
| CA |
| | Center for Power Electronics Systems (CPES), Virginia Tech | Christina DiMarino | |
Academic
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Grid
| Christina DiMarino is an assistant professor in Electrical and Computer Engineering at Virginia Tech, and is a faculty in the Center for Power Electronics Systems (CPES). She received her M.S. and Ph.D. degrees in electrical engineering from Virginia Tech in 2014 and 2018, respectively. She was a Webber Fellow from 2012 to 2015, and a Rolls-Royce Graduate Fellow from 2016 to 2017.
Her research interests include packaging and high-density integration of wide-bandgap power semiconductors and medium-voltage, multi-chip power modules. CPES has state-of-the-art packaging laboratories for designing, fabricating, characterizing, and testing advanced power module packages.
She has over 60 journal and conference publications, has received five best paper and presentation awards at international conferences, and was awarded the Outstanding New Assistant Professor Award at Virginia Tech in 2022. |
| VA |
| | Cich Research | Michael Cich | |
Small Business
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Grid
| Cich Research excels in the design and manufacturing of GaAs-based lock-on photoconductive switches. Our interest centers around understanding and engineering the role of deep levels in photoconductive switch physics. We are developing modeling tools to optimize designs for both GaAs based switches as well as emerging designs in wide-bandgap materials.
Our capabilities include mask design, process design and development, and manufacturing prototype switches. |
| CA |
| | Texas A&M University | Prasad Enjeti | |
Academic
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Power Generation: Renewable
| Wide experience in stacked modules in power cells (half-bridge, full-bridge, flying capacitor, etc.), and stacked cells in multi-level converters for medium- and high-voltage applications. Including simulations, experimentation, new topology configurations. Can support Category two of the solicitation that addresses the need for high switching frequency devices and/or modules which enables high-power, high-speed power electronics converters for future grid. |
| TX |
| | Switched Source | Charles Murray | |
Small Business
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Grid
| Switched Source has expertise in developing and deploying power electronics devices for electric distribution system automation. We are interested in partnering with organizations that have new materials or devices that could enable devices for distribution systems in the 9-27kV range. |
| IL |
| | NIST | Kris Bertness | |
Federal Government
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Other Energy Technologies
| GaN nanostructure fabrication and characterization for applications in specialized LEDs and FETs. Thermal management via non-traditional thermoelectrics. Nanoscale characterization and reference materials, including extreme UV atom probe tomography and scanning microwave impedance microscopy. |
| CO |
| | National Renewable Energy Laboratory | M. Brooks Tellekamp | |
Federally Funded Research and Development Center (FFRDC)
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Other Energy Technologies
| NREL has extensive experience in the semiconductor materials to devices development and maturation pipeline, with a broad set of capabilities to develop, characterize, and validate materials and devices. We are extremely interested in enabling efficient power electronics materials and devices. For the upcoming ULTRAFAST FOA I am interested in the following:
- Crystalline metallic substrates and virtual substrates for vertically conducting high current (Al,Ga)N devices
- Substrate removal and epilayer liftoff
- photoconductive switches
A subset of NREL's capabilities related to the ULTRAFAST FOA are:
- MBE growth of (Al,Ga)N and (Al,Ga)2O3 devices
- High Al-content AlGaN lattice-matched to metallic conductivity virtual substrates
- Cleanroom facilities tailored for rapid device design validation
- Custom package development, testing, validation
- Vast suite of characterization tools for coupled electrical and optical characterization
- single device testing up to 10kV and 1500A including in custom packages
- electrical, structural, and thermal theoretical treatment of heterostructure interfaces
- Technoeconomic analysis (TEA) team to accurately model cost impact of various technology changes at all levels of implementation and at scale
- advanced in operando microscopy facility coming online currently |
| CO |
| | Sandia National Laboratories | Robert Kaplar | |
Federally Funded Research and Development Center (FFRDC)
|
Grid
| Sandia National Laboratories has extensive experience in multiple types of semiconductor devices and packaging, power and control circuit implementation, system safety and security, and power system optimization for multiple applications. Numerous successful projects in different technology areas have been executed for ARPA-E and other customers. Sandia offers an advantageous combination of deep and broad technical expertise and capabilities making it well-suited to address critical and challenging problems.
Our interest for this effort lies in several areas including advanced control and protection schemes for both device and system safety, semiconductor devices, and novel circuit architectures to enable grid-level protection of devices and systems.
Sandia’s capabilities include advanced design and fabrication for the realization of multiple semiconductor device types for power (GaN and SiC), control (Si, GaAs, GaN, SiC) and optoelectronic (GaAs, InP) applications. Devices are made using our extensive cleanroom (>30,000 square feet for research and development) at the Microsystems Engineering Sciences and Applications (MESA) complex though custom designs can also be fabricated at partner companies. Novel circuit architectures can be realized using advanced simulation capabilities incorporating device compact models to optimize circuit and system level performance. Lastly these devices and circuits are characterized using Sandia test and measurement facilities for high voltage/high current, and high speed performance to understand transient effects and how they impact system performance and protection. Sandia also has extensive failure analysis capabilities to understand device through system reliability. |
| NM |
| | Rensselaer Polytechnic Institute | Christian Wetzel | |
Academic
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Building Efficiency
| We have established experience in characterization of group-III nitride heterostructures with particular emphasis on optical, electrical, and electro-optical spectroscopy tools. Of particular relevance for this call is our ability to quantify electric field strengths within a device structure by optical spectroscopy means to corroborate with electrical data. We are open for discussion and adaptation to your needs.
https://faculty.rpi.edu/christian-wetzel
http://www.rpi.edu/~wetzel
http://orcid.org/0000-0002-6055-0990
http://www.researcherid.com/rid/O-4017-2014
http://scholar.google.com/citations?user=DyBaCscAAAAJ |
| NY |
| | Adroit Materials | Dolar Khachariya | |
Small Business
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Other Energy Technologies
| Prof. Zlatko Sitar (Adroit Materials) and Prof. Ramon Collazo (NCSU) are working on developing and deploying III-nitride technology based on high-quality native AlN and GaN substrates.
1. We demonstrated selective-area p-type GaN regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. Using the developed implantation toolbox, we reported a state-of-the-art 2 kV breakdown voltage GaN-on-GaN junction barrier Schottky (JBS) and PN diodes.
2. We reported record high >10 MV/cm breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors grown on 2-inch AlN single crystal substrates. It was only possible due to high-quality AlGaN epi layers with low threading dislocation density <10^3 cm−2.
3. We have developed Si-implantation and annealing technology to obtain highly conductive AlN epi layers grown on AlN single crystal substrates. AlN layers with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5E18 cm−3) are reported. This was enabled by a low threading dislocation density (<10^3 cm−2), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. This non-equilibrium annealing technique maintained a shallow Si-donor state in AlN with an ionization energy of ∼70 meV.
4. We demonstrated very high electron mobility in Si epi-doped AlN layers grown on AlN single-crystal substrate. A room temperature n-type mobility >300 cm2/Vs was reported in AlN.
5. We are capable of growing AlN and GaN layers using hydride vapor phase epitaxy (HVPE) which leads to obtaining high-quality thick drift layers and standalone large-diameter substrates. |
| NC |
| | University of Nebraska-Lincoln | Jun Wang | |
Academic
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Grid
| I have been working on medium-voltage high-power power electronics building blocks (PEBBs) for 15 years with the development of a variety of PEBBs based on 1.7 kV and 3.3 kV Si IGBTs, 4.5 kV Si IGCTs, and 1.7 kV-10 kV SiC MOSFETs. In my current appointment, I have entered the field of power semiconductor packaging to develop novel energy-dense power modules with mitigated EMI and embedded intelligence for emerging applications, such as grid distribution and resiliency, automotive, hydrogen production, and fusion systems.
My research area includes WBG-based medium-voltage high-power PEBBs, power semiconductor packaging, EMI mitigation, advanced multilevel converter modeling and control, and fault protection.
My Google Scholar link:
https://scholar.google.com/citations?user=hkUbmbUAAAAJ&hl=en |
| NE |
| | Pennsylvania State University | Sukwon Choi | |
Academic
|
Other Energy Technologies
| Thermal characterization and electro-thermal co-design of wide bandgap/ultra-wide bandgap semiconductor devices, thermal management of microelectronics, and semiconductor device reliability. |
| PA |
| | Kyma Technologies | Jacob Leach | |
Small Business
|
Other Energy Technologies
| Kyma Technologies develops and manufacturers (Al)GaN and Ga2O3 substrates, epilayers, and devices. Kyma's device developments primarily include vertical diodes and transistors for power electronics applications, but Kyma has also developed and commercialized GaN-based photoconductive switches capable of supporting sub-ns pulse widths at voltages up to 10kV with on-state currents >250A. Kyma's proprietary epitaxial growth technique based on hydride vapor phase epitaxy (HVPE) is well suited to prepare large crystals with an array of potentially interesting dopants/co-dopants (in GaN, Kyma has prepared thick crystals doped with C, O, Mg, Si, Ti, V, Cr, Mn, and Fe) and is interested in working with packaging and circuit-level experts to develop ultrafast, high power components of interest to ARPA-e and the community at-large. |
| NC |
| | The Ohio State University | Hongping Zhao | |
Academic
|
Other Energy Technologies
| 1. Metalorganic chemical vapor deposition (MOCVD) of wide bandgap GaN. We have developed MOCVD epitaxial technique of high quality thick GaN drift layer with low background impurities and controllable doping concentration at low-e15 cm-3, necessary for high power device application. Record high breakdown voltage of 8 kV was demonstrated for GaN-on-GaN vertical PN diodes using in-house capability of MOCVD epitaxy and device fabrication/testing at OSU. With low dislocation density of GaN native substrate and high quality epitaxy, it is feasible to develop high current, high voltage power devices for resilient grid application.
2. Advanced epitaxy of GaN using laser-assisted MOCVD technique has been demonstrated as an effective approach to suppress background C incorporation, thus to further reduce the controllable doping in GaN targeting even higher breakdown voltage device applications. The fundamental direct bandgap of GaN allows the possibility to integrate optical components for faster switching and triggering at high current and voltage levels.
3. MOCVD epitaxy of ultrawide bandgap Ga2O3 and AlGaO. With a bandgap of ~ 4.8 eV, Ga2O3 sustain a high critical field of ~ 8 MV/cm. In addition, the availability of high quality Ga2O3 substrates grown via melt growth techniques, and capability for controllable n-type doping in a wide range provide the feasibility to develop Ga2O3 power devices with high current and high voltage. Record high room temperature mobility approaching the theoretical limit has been demonstrated for Ga2O3 grown by MOCVD growth technique. The capability to form AlGaO/GaO heterostructures, and in-situ growth of semi-insulating layers allow the design of novel high power devices based on both vertical and lateral configurations. |
| OH |
| | Great Lakes Crystal Technologies | Paul Quayle | |
Small Business
|
Other Energy Technologies
| Background & Capabilities: We are developing a suite of single crystal diamond materials products for use in next generation electronics, quantum sensors, x-ray optics, and high energy particle detection. We launched in 2019 and recently completed our R&D and MVP demonstration facility which has 2 advanced diamond crystal growth tools and a full suite of supporting process (including polishing, laser cutting & trimming, reactive ion etching, parts machining, & annealing) and characterization (including XRD, optical birefringence, & photoluminescence) capabilities. Our products include diamond plates, diamond substrates, and diamond epiwafers. We have boron-doping and nitrogen-doping capabilities and can create planes and arrays of NV centers using electron-irradiation and annealing. Since our start in 2019 we have been awarded a number of DOE & DOD SBIR/STTR grants, and we began supplying commercial products and services in Summer 2022. In the first half of 2023 we will build a prototype manufacturing facility to demonstrate manufacturing scaleup in the second half of 2023 and beyond.
Interests: We seek partners who can benefit from access to our materials and/or to our growing suite of fabrication and characterization capabilities. We are open to being a simple material or service supplier or better yet a close collaboration partner on ARPA-E proposal teams. |
| MI |
| | Seurat Technologies | Selim Elhadj | |
Small Business
|
Other Energy Technologies
| Our expertise is in making addressable optical switches for high power applications using custom, rep-rated short pulse and long pulse high power lasers. For that purpose, we focus on opto-electronic devices using wide bandgap semiconductor systems and stack optimized for peak power and high average power with active thermal management. |
| MA |
| | University of Houston | Prof. Harish Sarma Krishnamoorthy | |
Academic
|
Other Energy Technologies
| An ARPA-E OPEN-2021 awardee (https://arpa-e.energy.gov/technologies/projects/mini-pulps-miniaturized-pulsed-power-systems-mission-critical-applications) with expertise in the fields of power electronic converters, in-situ reliability assessment/prediction, characterization of wide band-gap semiconductor devices, etc. Recent focus areas of the research group have also been on mission critical applications and designing power converters for high frequency RF applications (e.g., 4G/5G, NMR/MRI, etc.). More information can be found here: https://pemsec.ece.uh.edu/researchprojects/.
I am open to collaboration in related fields and have always been excited to explore opportunities bridging power electronics with optics. Please feel free to contact me for potential partnerships. |
| TX |
| | Arizona State University | Mike Ranjram | |
Academic
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Power Generation: Renewable
| I am an assistant professor at Arizona State University with a research program centered around miniaturized and advanced power electronics. To push performance, our group focuses on switching frequencies greater than 0.5MHz at power levels from 50W to tens of kW (where grid-relevant power levels would be built out using these miniaturized modular blocks). Much of our work is currently rooted in strategies for improving the performance of magnetic components (i.e., power-stage inductors and transformers), as these tend to present a dominant bottleneck on high performance. Our work is validated experimentally, and we maintain a well-stocked power electronics laboratory at ASU capable of performing this research. Our work is relevant for grid-connected, renewable energy, and/or transportation systems.
We can interface with teams who would benefit from expertise in how novel devices can be employed in a power electronic converter to realize maximum gains, as expected for projects defined for "category two" and which may also be useful for the other two categories. |
| AZ |