Teaming Partners

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Organization 
Investigator Name 
Organization Type 
Area of Expertise 
Background, Interest,
and Capabilities
 
Contact Information 
State 
 
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 University of Illinois at Urbana-ChampaignShaloo Rakheja Academic Other Energy Technologies Computational electronics, Non-equilibrium transport, Monte Carlo, Boltzmann transport, Energy transport, Device simulation, Modeling, Optical-electrical-thermal design
Website: https://ece.illinois.edu/about/directory/faculty/rakheja

Email: rakheja@illinois.edu

Phone: 217-244-3616

Address: 208 N Wright St, Urbana, IL, 61801, United States
IL
 Eureka Aerospace Inc.Fred Zutavern Small Business Other Energy Technologies Experience in theory, experimental studies, and applications of GaAs Photoconductive Semiconductor Switches (PCSS). Experience in designing and manufacturing of GaAs PCSSs, developing a micro-optical transport system for optimal light-induced triggering, and packaging all the elements together with the laser emitting arrays into a compact switch unit. Our optical/electric lab is fully equipped to conduct the experimental characterization of PCSSs with high voltage pulses, evaluate transient properties, voltages, currents, and longevity of the switches. Optical engineering software and optical lab facilities allow us to design and test compact optical systems for the photoconductive switches’ triggering. Our team has a broad interdisciplinary expertise in the fields of semiconductors, electromagnetics, electrical engineering, and optics.
Website: eurekaaerospace.com

Email: tatoian@eurekaaerospace.com

Phone: 626 844 6664

Address: 600 N Rosemead Blvd, Ste 218, Pasadena, CA, 91107, United States
CA
 Texas Tech UniversityHongxing Jiang and Jingyu Lin Academic Grid Jiang-Lin group at Texas Tech University has the capability to produce large wafers (up to 6-inches in diameter) semi-bulk AlN and h-BN ultrawide bandgap semiconductor crystals. Track records: (1) Thermal neutron detectors fabricated from our h-BN semiconductor wafers hold the highest detection efficiency in the world; (2) Invented microLED in 2000 (MicroLED display market to hit USD 24 billion in 2027); (3) Invented single-chip GaN high voltage AC/DC LED in 2002 (adopted for general lighting and automobile head lights): (3) Developed in 1998 the 1st deep UV (195 nm) ps time-resolved PL spectroscopy for ultrawide wide bandgap semiconductor optical characterization; (4) Fabricated in 2004 the 1st AlGaN photonic crystal LED; (5) One of the first to experimentally determine the Mg acceptor energy level in AlN and to demonstrate the conductivity control in Al-rich AlGaN.
Website: https://www.depts.ttu.edu/ece/Nanophotonics/

Email: hx.jiang@ttu.edu

Phone: 8064414010

Address: Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409, United States
TX
 The Boeing CompanyShengyiLiu Large Business Transportation Interest: Altitude-capable power generation, conversion, distribution, and protection devices and systems with higher specific power, efficiency, and reliability for aircraft applications
Website: https://www.boeing.com/

Email: shengyi.liu@boeing.com

Phone: 2068566014

Address: 9725 E Marginal Way S, Tukwila, WA, 98108, United States
WA
 PG&EDamian Inglin Large Business Grid PG&E (Engineering, Planning, and Strategy organization, aka EP&S) is scouting for technologies in this area to collaborate on, foster development of, demonstrate in network, and eventually deploy for all applicable grid, microgrid, remote grid applications.
Website: www.pge.com

Email: damian.inglin@pge.com

Phone: +1 415 272 7160

Address: 300 Lakeside Drive, Oakland, CA, 94612, United States
CA
 Center for Power Electronics Systems (CPES), Virginia TechChristina DiMarino Academic Grid Christina DiMarino is an assistant professor in Electrical and Computer Engineering at Virginia Tech, and is a faculty in the Center for Power Electronics Systems (CPES). She received her M.S. and Ph.D. degrees in electrical engineering from Virginia Tech in 2014 and 2018, respectively. She was a Webber Fellow from 2012 to 2015, and a Rolls-Royce Graduate Fellow from 2016 to 2017.

Her research interests include packaging and high-density integration of wide-bandgap power semiconductors and medium-voltage, multi-chip power modules. CPES has state-of-the-art packaging laboratories for designing, fabricating, characterizing, and testing advanced power module packages.

She has over 60 journal and conference publications, has received five best paper and presentation awards at international conferences, and was awarded the Outstanding New Assistant Professor Award at Virginia Tech in 2022.
Website: https://cpes.vt.edu/people/faculty/1228

Email: dimarino@vt.edu

Phone: (571) 858-3203

Address: 900 N Glebe Rd, Arlington, VA, 22203, United States
VA
 Cich ResearchMichael Cich Small Business Grid Cich Research excels in the design and manufacturing of GaAs-based lock-on photoconductive switches. Our interest centers around understanding and engineering the role of deep levels in photoconductive switch physics. We are developing modeling tools to optimize designs for both GaAs based switches as well as emerging designs in wide-bandgap materials.
Our capabilities include mask design, process design and development, and manufacturing prototype switches.
Website: cichresearch.com

Email: mjcich@gmail.com

Phone: 5109269365

Address: 1151 Norval Way, San Jose, CA, 95125, United States
CA
 Texas A&M UniversityPrasad Enjeti Academic Power Generation: Renewable Wide experience in stacked modules in power cells (half-bridge, full-bridge, flying capacitor, etc.), and stacked cells in multi-level converters for medium- and high-voltage applications. Including simulations, experimentation, new topology configurations. Can support Category two of the solicitation that addresses the need for high switching frequency devices and/or modules which enables high-power, high-speed power electronics converters for future grid.
Website: https://engineering.tamu.edu/electrical/profiles/penjeti.html

Email: enjeti@tamu.edu

Phone: 979-204-8573

Address: Rm 301F WEB, ECE Department, Texas A&M University, College Station, TX, 77843, United States
TX
 Switched SourceCharles Murray Small Business Grid Switched Source has expertise in developing and deploying power electronics devices for electric distribution system automation. We are interested in partnering with organizations that have new materials or devices that could enable devices for distribution systems in the 9-27kV range.
Website: www.SwitchedSource.com

Email: CMurray@SwitchedSource.com

Phone: 13128901561

Address: 200 West Adams Street, Chicago, IL, 60606, United States
IL
 NISTKris Bertness Federal Government Other Energy Technologies GaN nanostructure fabrication and characterization for applications in specialized LEDs and FETs. Thermal management via non-traditional thermoelectrics. Nanoscale characterization and reference materials, including extreme UV atom probe tomography and scanning microwave impedance microscopy.
Website: https://www.nist.gov/programs-projects/gan-nanowire-growth

Email: kris.bertness@nist.gov

Phone: (303) 497-5069

Address: 325 Broadway St., Mail Stop 686.09, Boulder, CO, 80305, United States
CO
 National Renewable Energy LaboratoryM. Brooks Tellekamp Federally Funded Research and Development Center (FFRDC) Other Energy Technologies NREL has extensive experience in the semiconductor materials to devices development and maturation pipeline, with a broad set of capabilities to develop, characterize, and validate materials and devices. We are extremely interested in enabling efficient power electronics materials and devices. For the upcoming ULTRAFAST FOA I am interested in the following:

- Crystalline metallic substrates and virtual substrates for vertically conducting high current (Al,Ga)N devices
- Substrate removal and epilayer liftoff
- photoconductive switches

A subset of NREL's capabilities related to the ULTRAFAST FOA are:
- MBE growth of (Al,Ga)N and (Al,Ga)2O3 devices
- High Al-content AlGaN lattice-matched to metallic conductivity virtual substrates
- Cleanroom facilities tailored for rapid device design validation
- Custom package development, testing, validation
- Vast suite of characterization tools for coupled electrical and optical characterization
- single device testing up to 10kV and 1500A including in custom packages
- electrical, structural, and thermal theoretical treatment of heterostructure interfaces
- Technoeconomic analysis (TEA) team to accurately model cost impact of various technology changes at all levels of implementation and at scale
- advanced in operando microscopy facility coming online currently
Website: https://www.nrel.gov/materials-science/wide-bandgap-semiconductors.html

Email: brooks.tellekamp@nrel.gov

Phone: 303-384-6444

Address: 15013 Denver West Parkway, Golden, CO, 80401, United States
CO
 Sandia National LaboratoriesRobert Kaplar Federally Funded Research and Development Center (FFRDC) Grid Sandia National Laboratories has extensive experience in multiple types of semiconductor devices and packaging, power and control circuit implementation, system safety and security, and power system optimization for multiple applications. Numerous successful projects in different technology areas have been executed for ARPA-E and other customers. Sandia offers an advantageous combination of deep and broad technical expertise and capabilities making it well-suited to address critical and challenging problems.

Our interest for this effort lies in several areas including advanced control and protection schemes for both device and system safety, semiconductor devices, and novel circuit architectures to enable grid-level protection of devices and systems.

Sandia’s capabilities include advanced design and fabrication for the realization of multiple semiconductor device types for power (GaN and SiC), control (Si, GaAs, GaN, SiC) and optoelectronic (GaAs, InP) applications. Devices are made using our extensive cleanroom (>30,000 square feet for research and development) at the Microsystems Engineering Sciences and Applications (MESA) complex though custom designs can also be fabricated at partner companies. Novel circuit architectures can be realized using advanced simulation capabilities incorporating device compact models to optimize circuit and system level performance. Lastly these devices and circuits are characterized using Sandia test and measurement facilities for high voltage/high current, and high speed performance to understand transient effects and how they impact system performance and protection. Sandia also has extensive failure analysis capabilities to understand device through system reliability.
Website: https://www.sandia.gov/mesa/power-electronics/

Email: rjkapla@sandia.gov

Phone: (505) 844-8285

Address: P.O. Box 5800, MS 1086, Albuquerque, NM, 87185, United States
NM
 Rensselaer Polytechnic InstituteChristian Wetzel Academic Building Efficiency We have established experience in characterization of group-III nitride heterostructures with particular emphasis on optical, electrical, and electro-optical spectroscopy tools. Of particular relevance for this call is our ability to quantify electric field strengths within a device structure by optical spectroscopy means to corroborate with electrical data. We are open for discussion and adaptation to your needs.

https://faculty.rpi.edu/christian-wetzel
http://www.rpi.edu/~wetzel
http://orcid.org/0000-0002-6055-0990
http://www.researcherid.com/rid/O-4017-2014
http://scholar.google.com/citations?user=DyBaCscAAAAJ
Website: https://faculty.rpi.edu/christian-wetzel

Email: wetzel@rpi.edu

Phone: 518 276 3755

Address: 110 Eigth St Dept of Physics, Troy, NY, 12180, United States
NY
 Adroit MaterialsDolar Khachariya Small Business Other Energy Technologies Prof. Zlatko Sitar (Adroit Materials) and Prof. Ramon Collazo (NCSU) are working on developing and deploying III-nitride technology based on high-quality native AlN and GaN substrates.
1. We demonstrated selective-area p-type GaN regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. Using the developed implantation toolbox, we reported a state-of-the-art 2 kV breakdown voltage GaN-on-GaN junction barrier Schottky (JBS) and PN diodes.
2. We reported record high >10 MV/cm breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors grown on 2-inch AlN single crystal substrates. It was only possible due to high-quality AlGaN epi layers with low threading dislocation density <10^3 cm−2.
3. We have developed Si-implantation and annealing technology to obtain highly conductive AlN epi layers grown on AlN single crystal substrates. AlN layers with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5E18 cm−3) are reported. This was enabled by a low threading dislocation density (<10^3 cm−2), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. This non-equilibrium annealing technique maintained a shallow Si-donor state in AlN with an ionization energy of ∼70 meV.
4. We demonstrated very high electron mobility in Si epi-doped AlN layers grown on AlN single-crystal substrate. A room temperature n-type mobility >300 cm2/Vs was reported in AlN.
5. We are capable of growing AlN and GaN layers using hydride vapor phase epitaxy (HVPE) which leads to obtaining high-quality thick drift layers and standalone large-diameter substrates.
Website: http://adroitmaterials.com/

Email: info@adroitmaterials.com

Phone: 9198586365

Address: 2054 Kildaire Farm Road, Cary, NC, 27518, United States
NC
 University of Nebraska-LincolnJun Wang Academic Grid I have been working on medium-voltage high-power power electronics building blocks (PEBBs) for 15 years with the development of a variety of PEBBs based on 1.7 kV and 3.3 kV Si IGBTs, 4.5 kV Si IGCTs, and 1.7 kV-10 kV SiC MOSFETs. In my current appointment, I have entered the field of power semiconductor packaging to develop novel energy-dense power modules with mitigated EMI and embedded intelligence for emerging applications, such as grid distribution and resiliency, automotive, hydrogen production, and fusion systems.

My research area includes WBG-based medium-voltage high-power PEBBs, power semiconductor packaging, EMI mitigation, advanced multilevel converter modeling and control, and fault protection.

My Google Scholar link:
https://scholar.google.com/citations?user=hkUbmbUAAAAJ&hl=en
Website: https://engineering.unl.edu/ece/faculty/jun-wang/

Email: junwang@unl.edu

Phone: 540-553-5005

Address: Nebraska Hall E421K, Lincoln, NE, 68588, United States
NE
 Pennsylvania State UniversitySukwon Choi Academic Other Energy Technologies Thermal characterization and electro-thermal co-design of wide bandgap/ultra-wide bandgap semiconductor devices, thermal management of microelectronics, and semiconductor device reliability.
Website: https://sites.psu.edu/choi/

Email: sukwon.choi@psu.edu

Phone: 814-863-4355

Address: 306 Reber Building, University Park, PA, 16802, United States
PA
 Kyma TechnologiesJacob Leach Small Business Other Energy Technologies Kyma Technologies develops and manufacturers (Al)GaN and Ga2O3 substrates, epilayers, and devices. Kyma's device developments primarily include vertical diodes and transistors for power electronics applications, but Kyma has also developed and commercialized GaN-based photoconductive switches capable of supporting sub-ns pulse widths at voltages up to 10kV with on-state currents >250A. Kyma's proprietary epitaxial growth technique based on hydride vapor phase epitaxy (HVPE) is well suited to prepare large crystals with an array of potentially interesting dopants/co-dopants (in GaN, Kyma has prepared thick crystals doped with C, O, Mg, Si, Ti, V, Cr, Mn, and Fe) and is interested in working with packaging and circuit-level experts to develop ultrafast, high power components of interest to ARPA-e and the community at-large.
Website: www.kymatech.com

Email: leach@kymatech.com

Phone: 8043475512

Address: 8829 Midway West Road, Raleigh, NC, 27617, United States
NC
 The Ohio State UniversityHongping Zhao Academic Other Energy Technologies 1. Metalorganic chemical vapor deposition (MOCVD) of wide bandgap GaN. We have developed MOCVD epitaxial technique of high quality thick GaN drift layer with low background impurities and controllable doping concentration at low-e15 cm-3, necessary for high power device application. Record high breakdown voltage of 8 kV was demonstrated for GaN-on-GaN vertical PN diodes using in-house capability of MOCVD epitaxy and device fabrication/testing at OSU. With low dislocation density of GaN native substrate and high quality epitaxy, it is feasible to develop high current, high voltage power devices for resilient grid application.
2. Advanced epitaxy of GaN using laser-assisted MOCVD technique has been demonstrated as an effective approach to suppress background C incorporation, thus to further reduce the controllable doping in GaN targeting even higher breakdown voltage device applications. The fundamental direct bandgap of GaN allows the possibility to integrate optical components for faster switching and triggering at high current and voltage levels.
3. MOCVD epitaxy of ultrawide bandgap Ga2O3 and AlGaO. With a bandgap of ~ 4.8 eV, Ga2O3 sustain a high critical field of ~ 8 MV/cm. In addition, the availability of high quality Ga2O3 substrates grown via melt growth techniques, and capability for controllable n-type doping in a wide range provide the feasibility to develop Ga2O3 power devices with high current and high voltage. Record high room temperature mobility approaching the theoretical limit has been demonstrated for Ga2O3 grown by MOCVD growth technique. The capability to form AlGaO/GaO heterostructures, and in-situ growth of semi-insulating layers allow the design of novel high power devices based on both vertical and lateral configurations.
Website: https://ece.osu.edu/people/zhao.2592

Email: zhao.2592@osu.edu

Phone: 4843500459

Address: 205 Dreese Lab, 2015 Neil Ave., Columbus, OH, 43210, United States
OH
 Great Lakes Crystal TechnologiesPaul Quayle Small Business Other Energy Technologies Background & Capabilities: We are developing a suite of single crystal diamond materials products for use in next generation electronics, quantum sensors, x-ray optics, and high energy particle detection. We launched in 2019 and recently completed our R&D and MVP demonstration facility which has 2 advanced diamond crystal growth tools and a full suite of supporting process (including polishing, laser cutting & trimming, reactive ion etching, parts machining, & annealing) and characterization (including XRD, optical birefringence, & photoluminescence) capabilities. Our products include diamond plates, diamond substrates, and diamond epiwafers. We have boron-doping and nitrogen-doping capabilities and can create planes and arrays of NV centers using electron-irradiation and annealing. Since our start in 2019 we have been awarded a number of DOE & DOD SBIR/STTR grants, and we began supplying commercial products and services in Summer 2022. In the first half of 2023 we will build a prototype manufacturing facility to demonstrate manufacturing scaleup in the second half of 2023 and beyond.

Interests: We seek partners who can benefit from access to our materials and/or to our growing suite of fabrication and characterization capabilities. We are open to being a simple material or service supplier or better yet a close collaboration partner on ARPA-E proposal teams.
Website: glcrystal.com

Email: quayle@glcrystal.com

Phone: 9195938595

Address: 4942 Dawn Avenue, Ste 118, East Lansing, MI, 48823, United States
MI
 Seurat TechnologiesSelim Elhadj Small Business Other Energy Technologies Our expertise is in making addressable optical switches for high power applications using custom, rep-rated short pulse and long pulse high power lasers. For that purpose, we focus on opto-electronic devices using wide bandgap semiconductor systems and stack optimized for peak power and high average power with active thermal management.
Website: https://www.seurat.com/

Email: selhadj@seurat.com

Phone: 9259614038

Address: 265 Ballardvale St, Wilmington, MA, 01887, United States
MA
 University of HoustonProf. Harish Sarma Krishnamoorthy Academic Other Energy Technologies An ARPA-E OPEN-2021 awardee (https://arpa-e.energy.gov/technologies/projects/mini-pulps-miniaturized-pulsed-power-systems-mission-critical-applications) with expertise in the fields of power electronic converters, in-situ reliability assessment/prediction, characterization of wide band-gap semiconductor devices, etc. Recent focus areas of the research group have also been on mission critical applications and designing power converters for high frequency RF applications (e.g., 4G/5G, NMR/MRI, etc.). More information can be found here: https://pemsec.ece.uh.edu/researchprojects/.

I am open to collaboration in related fields and have always been excited to explore opportunities bridging power electronics with optics. Please feel free to contact me for potential partnerships.
Website: https://www.ece.uh.edu/faculty/krishnamoorthy

Email: hskrishn@uh.edu

Phone: +1-713-743-7382

Address: 4226 Martin Luther King Boulevard, N330, Engineering Building-1, Houston, TX, 77204, United States
TX
 Arizona State UniversityMike Ranjram Academic Power Generation: Renewable I am an assistant professor at Arizona State University with a research program centered around miniaturized and advanced power electronics. To push performance, our group focuses on switching frequencies greater than 0.5MHz at power levels from 50W to tens of kW (where grid-relevant power levels would be built out using these miniaturized modular blocks). Much of our work is currently rooted in strategies for improving the performance of magnetic components (i.e., power-stage inductors and transformers), as these tend to present a dominant bottleneck on high performance. Our work is validated experimentally, and we maintain a well-stocked power electronics laboratory at ASU capable of performing this research. Our work is relevant for grid-connected, renewable energy, and/or transportation systems.

We can interface with teams who would benefit from expertise in how novel devices can be employed in a power electronic converter to realize maximum gains, as expected for projects defined for "category two" and which may also be useful for the other two categories.
Website: https://faculty.engineering.asu.edu/ranjram/

Email: mike.ranjram@asu.edu

Phone: 8574456676

Address: 520 E Weber Dr., Apt. 31, Tempe, AZ, 85281, United States
AZ
 L3Harris Maritime Power and Energy-ANARobert McDowell Large Business Other Energy Technologies Electrical power generation, distribution, and protection equipment. Energy storage equipment for protection of electrical power grids.

L3Harris Maritime Power and Energy Solutions has been providing electrical power conversion and protection equipment to US and foreign navies for decades, also to US FAA, and commercial entities such as Westinghouse Nuclear.
Website: l3harris.com

Email: ROBERT.MCDOWELL@L3HARRIS.COM

Phone: 7142902627

Address: 901 E. Ball Road, Anaheim, CA, 92805, United States
CA
 Applied Physical Electronics LCWilliam Nunnally Small Business Other Energy Technologies Detailed knowledge and experience with optically controlled semiconductor switches.
Innovation and demonstration of first photo-conductive power switch in 1980 while at Los Alamos.
Recent research of optically-initiated, nanosecond closing SiC TRAPATT switch for DTRA.
Website: apelc.com

Email: wcn@apelc.com

Phone: 925-352-6134

Address: P.O. Box 341149, Austin, TX, 78734, United States
TX
 Arizona State UniversityHouqiang Fu Academic Other Energy Technologies Dr. Houqaing Fu is an Assistant Professor in the School of Electrical, Computer and Energy Engineering at Arizona State University. His research focuses on third-generation wide/ultrawide bandgap (WBG/UWBG) semiconductor materials and devices for applications in electronics and photonics. The PI has a strong track record of research and development of WBG/UWBG power electronics technology demonstrated by recent research on MOCVD growth, nanofabrication, materials and device characterizations of WBG/UWBG power devices. The PI is currently the Director of the ASU MOCVD Lab, which is a multi-million-dollar facility initiative by ASU Fulton Schools of Engineering. The PI has access to three MOCVD reactors at ASU that can be used to grow GaN, AlGaN, AlN, Ga2O3 and AlGaO. The PI has worked extensively in MOCVD growth, modeling, fabrication, and characterization of various WBG/UWBG devices (e.g., HEMTs and vertical power devices). The PI’s strengths are in the comprehensive understanding of WBG/UWBG semiconductors materials, devices, and modeling strong capability in MOCVD growth, electrical testing, and physical analysis.
Website: https://faculty.engineering.asu.edu/houqiangfu/

Email: houqiang@asu.edu

Phone: 4804525459

Address: Engineering Research Center, Tempe, AZ, 85281, United States
AZ