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Background, Interest,
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| | Kilpatrick Townsend & Stockton LLP | Craig Largent | |
Large Business
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Other Energy Technologies
| We are an international law firm with a leading Intellectual Property practice. Our Electrical Engineering & Software team includes patent attorneys with doctorates in semiconductors materials and expertise in obtaining patents covering vertical III-Nitride power electronics. |
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| | University of Houston | Jae-Hyun Ryou | |
Academic
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Other Energy Technologies
| The research at Ryou group at the University of Houston focuses on III-nitride semiconductor materials and devices with expertise in device modeling, epitaxial growth by MOCVD, heterostructure characterization, and device fabrication/characterization. We are currently developing a new-concept strain-engineered multifunctional electronic and photonic devices based on InAlGaN heterostructures. Further details can be found in the group website: http://ryouteam.me.uh.edu/default.html.
For the PNDIODES program, we can contribute following research areas among target research listed in the announcement:
(1) Selective area etching and epitaxial regrowth of doped region by MOCVD: Ryou has worked on the regrowth of p-type InGaN and AlGaN layers to demonstrate GaN/InGaN heterojunction bipolar transistors (HBTs) and E-mode heterostructure field-effect transistors (HFETs)
(5) Other novel experimental doping schemes and studies: The group is currently developing a new method to reduce the activation energy of the acceptor level in p-type GaN and AlGaN materials. |
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| | GeneSiC Semiconductor Inc. | Ranbir Singh | |
Small Business
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Power Generation: Renewable
| GeneSiC is a pioneer and world leader in Widebandgap device and circuits technology. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Our technology enables efficient harvesting of renewable energy sources |
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| | IP and Technology Experts | Mikhail Guz | |
Small Business
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Other Energy Technologies
| With more than 30 years of experience in system-level electronic products and semiconductors with industry leaders such as Apple, ABB, Fairchild, Cypress, ON Semiconductor, and Silicon Valley startups, we have walked in your shoes. Now our expertise is at your disposal to help you reach your goals.
We can help you with a broad range of tasks from corporate strategy to product development and product management, system and application engineering, marketing, GTM strategy, supply chain, manufacturing operations, and financial planning and analysis. We also bring a unique combination of deep technical expertise and hands-on experience in all aspects of intellectual property creation, management, and monetization. |
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| | University of Florida | Steve Pearton and Fan Ren | |
Academic
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Other Energy Technologies
| developed much of the etching, implant doping, edge termination, thermally stable contacts and junction passivation technology used in GaN electronics. Can assist lead partner with design and characterization of these modules. |
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| | Sandia National Laboratories | Olga Spahn | |
Federally Funded Research and Development Center (FFRDC)
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Other Energy Technologies
| Sandia National Laboratories has pioneered research and development in the area of III-N materials and devices for a variety of electronic and optoelectronic applications. Work will be performed in Sandia’s MESA facility, the largest government investment in microsystems technology in the world (more than $600M). The complex provides a state-of-the-art facility for quick-turnaround research-and-development-scale synthesis, fabrication, characterization, and modeling of semiconductor microsystems, including the III-N compound semiconductor materials and heterostructures of interest to PNDIODES proposal call.
Sandia offers expertise in the following technical areas:
• In Materials Synthesis, the team has several decades of experience in the MOCVD epitaxial growth and regrowth of III-N materials, including AlGaN alloys and heterostructures for UV optoelectronics and power electronics
• In Device Realization, the Sandia has MESA microfabrication facility, as well as modeling/simulation, process design and development, and micro- and optoelectronic device fabrication
• In Material and Device characterization , Sandia has expert staff and an extensive suite of capabilities such as cathodoluminescence, time resolved photoluminescence, capacitance/voltage profiling, Hall measurements, transmission and scanning electron microscopy, electron beam induced current measurements, thermal properties characterization and many others. Also available are unique capabilities for defect studies, such as deep level transient spectroscopy and deep level thermal spectroscopy, as well as deep staff expertise in defect physics. Device testing capabilities such as high voltage/power current-voltage probe stations for wafer, die and package level devices are available. |
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| | University of Alabama | Patrick Kung | |
Academic
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Other Energy Technologies
| Atom probe tomography of GaN semiconductors and devices (e.g. AlGaN/GaN and AlInN/GaN), including specimen prep using dual-beam focused ion beam. We have recently upgraded our tool to the new CAMECA LEAP 5000 for sub-nanometer 3D imaging and analysis of dopant and impurities. We have demonstrated ability to achieve voltage and laser pulsing mode imaging of GaN. (We have also expertise on using this technique for plain semiconductor and core-shell nanowire structures).
Other techniques available to complement includes: TEM, SEM, microRaman, microPL and imaging. |
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| | Lehigh University | Jonathan Wierer | |
Academic
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Other Energy Technologies
| Lehigh University’s Center for Photonics and Nanoelectonics (CPN) has a faculty team of experts working on wide bandgap, III-nitride (AlInGaN) semiconductors. The CPN has vertically-integrated core research facilities and faculty expertise spanning from materials, devices, integrated systems, and computational. Specifically, for III-nitride semiconductors, the work spans across theoretical studies, bulk GaN growth, MOCVD growth, and device processing and design.
For this ARPA-E program the Lehigh/CPN team can contribute:
1) Full device fabrication process including ICP and photoelectrochemical GaN etch capabilities and methods to control GaN lattice damage.
2) MOCVD GaN facilities and prior experience of selective regrowth of GaN, and unique growth mode used for nano-epitaxy of quantum structures and on nano-patterned substrates.
3) Computational materials, computational nanostructures, TCAD modeling, and density functional theory simulations as tools to gain understanding of experimental results.
4) Material and device characterization expertise, including IV, CV, TEM, AFM, PL, XRD, and XPS. |
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| | University of South Florida | Andrew Hoff | |
Academic
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Other Energy Technologies
| USF has had active programs in Defect Engineering and non-contact Defect Visualization for the past 25 years. A universal theme has been to exploit fast and contactless determination of the electric potential at the surface of an in-process semiconductor substrate to determine and characterize the electrical impact of preceding manufacturing methods to both control and optimize manufacturing yield. Outcomes include: inline and preparation free (no device fabrication), sodium measurements in dielectrics, plasma damage in deposited and etched film structures due to both system hardware configuration and plasma recipe characteristics, afterglow oxidation of SiC, C-V characterization of oxide-SiC structures, interface trap density measurements in WBG materials, and doping density measurements in WBG semiconductors. The most productive of these activities was a state funded program with Agere Systems to develop inline monitoring of contamination and defects in a state of the art CMOS fabrication facility utilizing commercial corona-Kelvin metrology tools supplied by Semiconductor Diagnostics. USF can support the PNDIODES program with its SDI FAaST Corona-Kelvin Metrology enabling whole wafer mapping and programmable multi-point characterization and with processing and metrology capabilities available in the Nanotechnology Research and Education Center, NREC. |
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| | Semilab SDI | Andrew Findlay | |
Small Business
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Other Energy Technologies
| Semilab is the world leader in non-contact electrical metrology for characterization of semiconductor materials, dielectrics and interfaces. For PNDIODES program Semilab offers high precision dopant monitoring on wafers and samples without contacting the surface and without fabrication of any test devices. The non-invasive technique, developed especially for GaN, AlGaN and SiC enables the use of the same bare and oxidized wafers in a sequence of measurement-processing steps saving cost and time in research and development.
Semilab GaN/SiC tools offer non-contact corona-Kelvin C-V for dopant and interface characterization with capabilities of wafer mapping, discrete site measurement and high resolution (micrometer and Nanometer) selective area monitoring. |
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| | Michigan State University Department of Mechanical Engineering | Rebecca Anthony | |
Academic
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None of the above
| Dr. Anthony and her group have been working in the area of improving fundamental understanding of how surface and structural properties of nanocrystals are linked to their optoelectronic performance, as explored through plasma-based synthesis and modification of materials. The Plasmas and Nanomaterials Laboratory at Michigan State University is currently synthesizing crystalline GaN nanoparticles and exploring links between their surface properties, stoichiometry, size, structural properties, and optoelectronic properties using experimental characterization techniques. We offer a novel way to explore defect passivation in GaN. Plasma-produced GaN nanocrystals (NCs) are ideal templates to study defect passivation methods: NCs have very high surface-to-volume ratio, meaning that defect densities can be higher for NCs compared to bulk or thin-film materials. The higher defect density means that the defects can be easily probed before and after passivation treatments, improving diagnostics on which defects impact device performance and how they can be eliminated. Our experimental capabilities include GaN synthesis, surface treatments including in-flight and post-synthesis steps, and diagnostic characterization methods such as electron paramagnetic spin resonance (EPR) and others. We are also expanding to include doping and alloying. |
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| | University of Maryland | Prof. Aris Christou | |
Academic
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Other Energy Technologies
| Our research focuses on failure mechanisms of GaN switches. We are interested in the development of reliable vertical power electronic devices using novel GaN based V-HFETS power switches. We seek collaboration in technologies necessary to overcome the various research and manufacturing challenges for high voltage applications. These challenges include: doping, selective doping and selective area epitaxy, interface and surface stability as well as all issues related tointerconnects related failure mechanisms. We are interested in investigating technology parameters such as doping activation, choice of the appropriate material system, and crystal plane for controlling polarization and piezoelectric effects, optimally processed device profiles for maintaining high electric fields while keeping them below their critical values, surface damage after etching, passivation, heat dissipation through spreaders and heat sinks made for example from diamond, confined epitaxy and growth of layers with low doping values. These are key parameters determining the power switch performance and promising improvement of their parameters beyond the current state of the art.
A key requirement for the successful development of power switches is the determination of degradation mechanisms and achieving switch robustness. Our research incorporates new multifaceted physics of failure for each degradation mechanism. The University and especially the nanfab and nano characterization facility are ideal to carry out research related to such research. |
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| | NIST | Kris Bertness | |
Federally Funded Research and Development Center (FFRDC)
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Other Energy Technologies
| NIST research teams have developed unique metrology methods for dopant characterization in group-III nitride nanostructures. Noncontact methods for dopant quantification include Raman spectroscopy determination of n-type and p-type doping concentrations and near-field scanning microwave microscopy with nanometer-scale spatial resolution and subsurface sensitivity. These are complemented by atom probe tomography, cathodoluminescence and time-resolved photoluminescence for compositional analysis in GaN and related alloys, and electron backscatter diffraction (for strain determination). These teams have expertise in preparation of samples for transmission electron microscopy and atom probe tomography using focused ion beam from planar samples and large core-shell nanowire structures and working with nitride materials grown by HVPE, MBE, and OMVPE. The teams can also fabricate test nanostructures with either HVPE or MBE. Primary PIs are Kris Bertness, Pavel Kabos, Norman Sanford, and Albert Davydov. |
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| | U.S. Naval Research Laboratory | Travis Anderson | |
Government Owned and Operated (GOGO)
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Other Energy Technologies
| The High Power Electronics Branch at the U.S. Naval Research Laboratory has extensive experience in wide bandgap power device design, fabrication, and testing. We are uniquely positioned to provide support in the following areas:
- Implanted dopant activation in GaN using the multicycle rapid thermal annealing technique
- Device testing and failure analysis, including DC I-V, C-V, ultrafast pulsed I-V, monochromatic illumination for photoionization studies, and high voltage testing using a vacuum probe station with coupled electroluminescence imaging and spectral extraction. |
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| | Barnett Technical Services | Steve Barnett | |
Small Business
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Other Energy Technologies
| Barnett Technical Services (BTS) is a US-based service provider for the material science industry. For the PNDIODES program, BTS works closely with Attolight, the manufacturer of a best-in-class cathodoluminescence (CL) system to provide service measurements for novel materials in power electronics. Attolight builds fully integrated CL systems that optimize electron beam parameters and light collection optics to carry out quantitative CL. This allows us to offer measurements with a number of critical features, including:
- Quantitative CL measurements (constant collection efficiency throughout field-of-view and on a measurement-to-measurement basis),
- Achromatic collection optics
- Low temperature measurement capability (to 10K),
- Capability for CL measurements from UV to near-IR wavelength range.
Our team has experience in using CL for failure analysis of GaN-based HEMTs and a range of other semiconductor materials. Measurements may also be combined with EBIC capabilities in a single sample run. |
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| | Sumitomo Electric Semiconductor Materials | Scott Davis | |
Large Business
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Other Energy Technologies
| Sumitomo Electric Semiconductor Materials is a supplier of compound semiconductor materials. We have been shipping manufacturing volumes of 2 inch diameter free standing GaN wafers for more than a decade. We are also shipping 4 inch diameter free-standing GaN wafers in manufacturing volumes. |
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| | PARC | Noble Johnson | |
Large Business
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Other Energy Technologies
| PARC, a Xerox company, offers deep understanding into the physics and materials science of AlGaInN semiconductors, extensive experience in the design, growth, fabrication, and testing of nitride optical emitters, and a strong record of device innovation. Our R&D focus areas are identification of materials/device issues, invention of solutions, reduction to practice, and demonstration of prototypes.
A sampling of PARC achievements and performance milestones in nitride optical emitters:
1995: High-brightness blue and violet InGaN SQW LEDs
1997: Pulsed lasers with InGaN MQW (first outside of Japan)
1998: First distributed feedback InGaN laser diode
2000: cw InGaN MQW laser diodes transferred to copper substrate via laser-lift-off
2001: First UV-LED on bulk AlN substrate
2003: First demonstration of UV laser diode with AlGaN MQW (357.9 nm)
2004: First laser diode on (bulk) AlN: 369 nm, pulsed power > 130mW
2008: Silver-clad nitride semiconductor laser diode
2011: First blue in-well pumped GaN-based VECSEL
2011: Shortest wavelength optically pumped AlGaN laser at λ = 237nm
2016: Highest reported output power (>200mW) for deep-UV cathodoluminescense (λ = 246 nm), from
AlGaN/AlN multiple-quantum-well heterostructures irradiated with an electron beam.
PARC offers a full range of vertically integrated resources for the development of GaN devices. These include device design and modeling, epitaxial growth by MOCVD, device fabrication, and materials and device characterization.
PARC’s focus has been on conducting research on the most promising and challenging materials and device issues in the nitride technology, such as bandgap engineering, p- and n-type doping, and strain management. With our recent focus on AlGaN materials and devices for UV wavelengths, our capabilities and experience play directly into improvements for the realization of the full potential of wide bandgap and ultra-wide bandgap nitride-based electronic as well as optoelectronic devices. Our expertise includes advanced interconnects and circuit design for power conversion and heterogeneous integration. Our experience, resources, and knowledge of the cutting edge of nitride technology enable PARC to work with companies to improve the performance of existing devices or to develop novel approaches that can provide competitive advantage. |
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| | NC State University | Alex Huang | |
Academic
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Other Energy Technologies
| Dr. Huang and his team at NCSU has been working on the development of Si and WBG power devices for the last 30 years. More specifically, in the past ten years, under the support from the NSF and various US industry companies, the team has been developing avrious power devices including SiC JBS diode, SiC GTo thyristors, GaN HFET and GaN PN diode based on GaN on Si substrate. In the work on GaN on Si substrate, high temperature implantation of P type dopants and their anneal were studied to form PN junction with promising result. Based on this, the team has recent started to work on PN junction formation on single crystal GaN substrate.
Therefore we will very interested in forming a team with other interested part to study PN junction formation in GaN and AlN substrate, as well as their application to novel power device fabrications. |
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| | University of Illinois at Urbana-Champaign | Kyekyoon (Kevin) Kim | |
Academic
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Other Energy Technologies
| We have 20+ years of research on MBE-based Selective-Area Processing of III-Nitride materials for growth and device fabrication. We pioneered selective area growth, etching, and doping, demonstrating record-breaking performances consisting of high channel current, low contact resistivity (1.8 x 10^-8 Ω·cm2), non-alloyed Ohmic contacts (for HEMTs), high breakdown field (9.6 MV/cm), high breakdown voltage per unit gate-drain distance (106 V/µm), and controlled, stable n- and p-doping (> 10^18 cm-3).
We are interested in further development and improvement of these in terms of desired doping concentration, defect density, smooth interfaces, and thermal budget for the development of high-performance vertical power devices. We have a custom-designed state-of-the-art plasma-assisted MBE system for growing III-Nitrides, a complete array of device fabrication and microanalysis facilities, and advanced device simulation tools most suitable for carrying out high-level studies of vertical power devices. |
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| | Akoustis Technologies, Inc. | Shawn Gibb | |
Small Business
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Other Energy Technologies
| Akoustis’ focus is to commercialize and manufacture our patented BulkONE™ acoustic wave technology to address the critical frequency-selectivity requirements in today’s mobile smartphones – improving the efficiency and signal quality of Mobile Wireless devices and enabling The Internet of Things (IoT). Our approach utilizes single crystal piezoelectric materials to create a new class of acoustic wave filters – improving performance, lowering cost and driving miniaturization. Akoustis’ Bulk ONE™ filters originate from materials which exhibit 30% better acoustic performance when compared to the incumbent thin-film technologies deployed today. Our capabilities include:
- Epitaxial structure design
- Material and device modeling and simulation
- Device design and optimization |
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| | Virginia Tech | Guo-Quan Lu | |
Academic
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Power Generation: Renewable
| My research expertise is in development of materials and packaging technologies for integration of high-power density electronics, such as power electronics converters, rf amplifiers, and high-power optoelectronics. The material systems I developed include (1) nanosilver pastes for high-temperature, high-thermal conductivity, and high-reliability bonding of semiconductor chips and (2) soft magnetic materials for low-temperature, pressure-less processing of magnetic components used in high-frequency applications. The packaging technologies I developed have led to fabrication of three-dimensional, low-profile, double-side cooled, and high-temperature power electronics modules. I have also done extensive analyses and measurements on thermal performance and reliability of high-power density electronics systems. One of my most recent research developments is in additive manufacturing or three-D printing of magnetic components, with either powdered or ferrite core, in power electronics systems.
The above-mentioned research contributions come mainly from my research activities in the Center for Power Electronics Systems (CPES) at Virginia Tech. I am a professor jointly appointed between the Bradley Department of ECE and the Department of MSE at Virginia Tech. I have a double-major BS degree in Physics and MSE from Carnegie-Mellon University and Ph.D. in Applied Physics/Materials Science from Harvard University. I have published over 100 peer-reviewed journal articles and over 100 papers in conference proceedings. In 1995, I won a Virginia Tech Sporn award for excellence in teaching of engineering subjects and a National Science Foundation CAREER award. The nanoscale silver paste, which my graduate students and I invented, for low-temperature joining of semiconductor chips was recognized with an R&D 100 award in 2007. |
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| | Virginia Tech | Louis J. Guido | |
Academic
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Other Energy Technologies
| Growth of group III nitrides via MOVPE, selective-area regrowth; structural, chemical and electronic characterization of nitride materials, p-n junction diode design, synthesis, fabrication and testing |
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| | State University of New York-Polytechnic Institute | Shadi Shahedipour-Sandvik | |
Academic
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Other Energy Technologies
| long track record of experience in III-Nitride wide bandage materials growth, characterization, device design/processing, fabrication and measurement. established track record of expertise in theoretical modeling and experimental expertise in GaN-based selective epitaxy, epitaxy on bulk substrates, and doping/impurity incorporation studies, amongst others. Existing state-of-the-art (MOCVD) epitaxial growth facility and characterization including an in-situ stress monitoring for real time stress evolution assessment, and a university based ion beam laboratory that has both a high-energy Dynamitron particle accelerator and a low-energy Extrion ion implanter, providing advanced ion beam capabilities for materials analysis, ion implantation, irradiation, and nanostructure fabrication.. Please refer to http://www.albany.edu/WBGOptronixlab/index.html , and http://www.albany.edu/ionbeamlab/index.shtml for more info on our current projects and list of capabilities. |
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| | University of New Mexico | Daniel Feezell | |
Academic
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Other Energy Technologies
| Prof. Feezell’s group at the Center for High Technology Materials at the University of New Mexico specializes in epitaxial growth of III-nitride semiconductor materials using metal organic chemical vapor deposition (MOCVD). We have extensive experience with bottom-up selective-area growth on patterned templates for nanostructure-based light-emitting diode arrays. We also have extensive experience in conventional MOCVD growth on low-defect-density free-standing GaN substrates, including c-plane, nonpolar, and semipolar orientations. Specific capabilities available in our lab include MOCVD growth, full device fabrication, electrical and optical device characterization, and a variety of materials characterization techniques. |
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| | Kyma Technologies, Inc. | Keith Evans | |
Small Business
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Other Energy Technologies
| Kyma Technologies is a rapidly growing materials science company dedicated to developing, producing and marketing crystalline wide bandgap semiconductor materials as well as select crystal growth tools and devices. We are best known for using HVPE and PVD to make GaN & AlN but we also supply and develop AlN, Ga2O3, MoS2, and diamond materials.
For the PNDIODES Kyma could provide support to a proposing team by providing:
1) bulk GaN substrates for vertical device development
2) various bulk and template GaN wafers with varying defect density that might support studies of the quality of selective area doping or regrowth processes
3) substrate reclaim (whether originally from Kyma or not) in which we remove the epi and CMP the surface to create a thinner but otherwise similar quality substrate to the original |
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