ARPA-E Archived Funding Opportunities

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  DE-FOA-0001691 Power Nitride Doping Innovation Offers Devices Enabling SWITCHES (PNDIODES) Funding Opportunity Announcement (FOA) 1/4/2017 05:00 PM ET

DE-FOA-0001691: Power Nitride Doping Innovation Offers Devices Enabling SWITCHES (PNDIODES)

The PNDIODES (Power Nitride Doping Innovation Offers Devices Enabling SWITCHES) program seeks to fund transformational advances and mechanistic understanding in the process of selective area doping in the III-Nitride wide band gap (WBG) semiconductor material system and the demonstration of arbitrarily placed, reliable, contactable, and generally useable p-n junction regions that enable high-performance and reliable vertical power electronic semiconductor devices. The microscopic mechanistic understanding and transformational technologies will address the major obstacle in the fabrication of vertical GaN power electronic devices experienced by most of the teams in the ARPA-E SWITCHES (Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-Efficiency Systems) program. This challenge has been the lack of a viable GaN selective area doping or selective area epitaxial regrowth process that yields material of sufficiently high quality to enable a defect-free p-n junction on patterned GaN surfaces. Success in this area will allow further development of a revolutionary and powerful class of vertical GaN power electronic devices suitable for 1200V to 10kV broad range of applications (consumer electronics, power supplies, solar inverters, wind power, automotive, motor drives, ship propulsion, rail, and the grid).

Documents

  • PNDIODES_ARPA-E_311_Full_FOA_-_FINAL (Last Updated: 10/27/2016 03:30 PM ET)

Application Forms and Templates

The following forms and templates may be used as part of the application submission. Note that these forms and templates do not necessarily constitute all the documents required for a complete application. Please refer to the 'Application and Submission Information' of the published announcement to learn more about the required application content requirements.

Full Application

  • SF-424 (Last Updated: 10/27/2016 03:57 PM ET)
  • PNDIODES - Technical Volume Template (Last Updated: 11/2/2016 09:54 AM ET)
  • Budget Justification/ SF-424A Workbook (Last Updated: 10/27/2016 03:59 PM ET)
  • Budget Justification/ SF-424A Workbook Guidance (Last Updated: 10/27/2016 03:59 PM ET)
  • Business Assurances & Disclosures Form - Template (Last Updated: 10/27/2016 03:59 PM ET)
  • Business Assurances & Disclosures Form - Sample (Last Updated: 10/27/2016 04:00 PM ET)
  • Summary Slide Template (Last Updated: 10/27/2016 04:00 PM ET)
  • Summary for Public Release Template (Last Updated: 10/27/2016 04:00 PM ET)
  • Replies to Reviewer Comments Template (Last Updated: 10/27/2016 04:01 PM ET)

Contact Information

  • ExchangeHelp@hq.doe.gov 
    Please contact the email address above for questions regarding ARPA-Eā€™s online application portal, ARPA-E eXCHANGE.
  • ARPA-E-CO@hq.doe.gov 
    Please contact the email address above for questions regarding Funding Opportunity Announcements. ARPA-E will post responses on a weekly basis to any questions that are received. ARPA-E may re-phrase questions or consolidate similar questions for administrative purposes.

Submission Deadlines

  • Full Application Submission Deadline: 1/4/2017 5:00 PM ET
  • View Full Application Reviewer Comments Period: 2/21/2017 5:00 PM ET ā€“ 2/24/2017 5:00 PM ET